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| PHD95N03LT N-channel enhancement mode field-effect transistor Rev. 01 -- 18 July 2001 Product data M3D300 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOSTM1 technology. Product availability: PHD95N03LT in SOT428 (D-PAK). 2. Features s Low on-state resistance s Fast switching. 3. Applications s High frequency computer motherboard DC to DC converters 4. Pinning information c Table 1: Pin 1 2 3 mb Pinning - SOT428, simplified outline and symbol c Description gate (g) Simplified outline mb Symbol d drain (d) source (s) mounting base, connected to drain (d) [1] g s MBB076 2 1 Top view 3 MBK091 SOT428 (D-Pak) [1] It is not possible to make connection to pin 2 of the SOT428 package. 1. TrenchMOS is a trademark of Royal Philips Electronics. Philips Semiconductors PHD95N03LT N-channel enhancement mode field-effect transistor 5. Quick reference data Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tj = 25 to 175 C Tmb = 25 C; VGS = 5 V Tmb = 25 C VGS = 10 V; ID = 25 A VGS = 5 V; ID = 25 A Typ - - - - 5 7.5 Max 25 75 115 175 7 9 Unit V A W C m m drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS VGSM ID IDM Ptot Tstg Tj IS ISM EAS drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) gate-source voltage drain current (DC) peak drain current total power dissipation storage temperature operating junction temperature source (diode forward) current (DC) Tmb = 25 C peak source (diode forward) current Tmb = 25 C; pulsed; tp 10 s non-repetitive avalanche energy unclamped inductive load; ID = 75 A; tp = 0.1 ms; VDD = 15 V; RGS = 50 ; VGS = 5V; starting Tj = 25 C; unclamped inductive load; VDD = 15 V; RGS = 50 ; VGS = 5V; starting Tj = 25 C tp 50 s; pulsed; duty cycle 25 %; Tj 150 C Tmb = 25 C; VGS = 5 V; Figure 2 and 3 Tmb = 100 C; VGS = 5 V; Figure 2 Tmb = 25 C; pulsed; tp 10 s; Figure 3 Tmb = 25 C; Figure 1 Conditions Tj = 25 to 175 C Tj = 25 to 175 C; RGS = 20 k Min - - - - - - - - -55 -55 - - - Max 25 25 15 20 75 61 240 115 +175 +175 75 240 120 Unit V V V V A A A W C C A A mJ Source-drain diode Avalanche ruggedness IAS non-repetitive avalanche current - 75 A 9397 750 08216 (c) Philips Electronics N.V. 2001. All rights reserved. Product data Rev. 01 -- 18 July 2001 2 of 13 Philips Semiconductors PHD95N03LT N-channel enhancement mode field-effect transistor 120 Pder (%) 100 03aa16 03ae86 120 Ider (%) 100 80 80 60 60 40 40 20 20 0 0 50 100 150 Tmb (oC) 0 200 0 50 100 150 200 Tmb (C) P tot P der = ---------------------- x 100% P tot ( 25 C ) ID I der = ------------------ x 100% I D ( 25 C ) Fig 1. Normalized total power dissipation as a function of mounting base temperature. Fig 2. Normalized continuous drain current as a function of mounting base temperature. 103 03ae87 ID (A) RDSon = VDS / ID tp = 10 s 100 s 102 1 ms D.C. 10 ms 100 ms tp T t 10 P = tp T 1 1 10 VDS (V) 102 Tmb = 25 C; IDM is single pulse. Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. 9397 750 08216 (c) Philips Electronics N.V. 2001. All rights reserved. Product data Rev. 01 -- 18 July 2001 3 of 13 Philips Semiconductors PHD95N03LT N-channel enhancement mode field-effect transistor 7. Thermal characteristics Table 4: Rth(j-mb) Rth(j-a) Thermal characteristics Conditions Figure 4 mounted on a printed circuit board; minimum footprint Value Unit 1.3 50 K/W K/W thermal resistance from junction to mounting base thermal resistance from junction to ambient Symbol Parameter 7.1 Transient thermal impedance 10 Zth(j-mb) (K/W) 1 = 0.5 0.2 10-1 0.1 0.05 0.02 10-2 03ae85 P single pulse = tp T tp T 10-3 10-5 10 10-3 10-2 10-1 1 tp (s) t 10 Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration. 9397 750 08216 (c) Philips Electronics N.V. 2001. All rights reserved. Product data Rev. 01 -- 18 July 2001 4 of 13 Philips Semiconductors PHD95N03LT N-channel enhancement mode field-effect transistor 8. Characteristics Table 5: Characteristics Tj = 25 C unless otherwise specified Symbol Parameter Static characteristics V(BR)DSS drain-source breakdown voltage ID = 0.25 mA; VGS = 0 V Tj = 25 C Tj = -55 C VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 9 Tj = 25 C Tj = 175 C Tj = -55 C IDSS drain-source leakage current VDS = 25 V; VGS = 0 V Tj = 25 C Tj = 175 C IGSS RDSon gate-source leakage current drain-source on-state resistance VGS = 5 V; VDS = 0 V VGS = 5 V; ID = 25 A; Figure 7 and 8 Tj = 25 C Tj = 175 C VGS = 10 V; ID = 25 A; Figure 7 and 8 Tj = 25 C Dynamic characteristics gfs Qg(tot) Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf VSD forward transconductance total gate charge gate-source charge gate-drain (Miller) charge input capacitance output capacitance reverse transfer capacitance turn-on delay time turn-on rise time turn-off delay time turn-off fall time source-drain (diode forward) voltage IS = 25 A; VGS = 0 V; Figure 12 IS = 40 A; VGS = 0 V; Figure 12 VDD = 15 V; ID = 15 A; VGS = 10 V; RG = 6 ; resistive load VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 11 VDS = 25 V; ID = 50 A ID = 50 A; VDD = 12 V; VGS = 4.5 V; Figure 13 - - - - - - - - - - - - - 50 43 12 16 770 500 10 30 110 80 0.85 0.9 - - - - - - 20 50 140 100 1.2 - S nC nC nC pF pF pF ns ns ns ns V V - 5 7 m - - 7.5 13 9 15.5 m m - - - 0.05 - 10 10 500 100 A A nA 1 0.5 - 1.5 - - 2 - 2.3 V V V 25 22 - - - - V V Conditions Min Typ Max Unit 2200 - Source-drain diode 9397 750 08216 (c) Philips Electronics N.V. 2001. All rights reserved. Product data Rev. 01 -- 18 July 2001 5 of 13 Philips Semiconductors PHD95N03LT N-channel enhancement mode field-effect transistor 03ad78 03ad80 75 ID (A) 60 10 V 5 V 3.5 V Tj = 25 C 75 ID (A) 60 VDS > ID x RDSon 45 3V 30 45 30 15 VGS = 2.5 V 0 0 0.4 0.8 1.2 1.6 2 VDS (V) 15 175 C Tj = 25 C 0 0 1 2 3 VGS (V) 4 Tj = 25 C Tj = 25 C and 175 C; VDS ID x RDSON Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values. Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values. 03ad79 0.06 RDSon () 0.05 2 a 1.6 03ad57 2.5 V VGS = 3 V Tj = 25 C 0.04 1.2 0.03 0.8 0.02 3.5 V 0.01 5V 10 V 0 0 15 30 45 60 ID (A) 75 0 -60 0 60 120 Tj (C) 180 0.4 Tj = 25 C R DSon a = --------------------------R DSon ( 25 C ) Fig 7. Drain-source on-state resistance as a function of drain current; typical values. Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. 9397 750 08216 (c) Philips Electronics N.V. 2001. All rights reserved. Product data Rev. 01 -- 18 July 2001 6 of 13 Philips Semiconductors PHD95N03LT N-channel enhancement mode field-effect transistor 03aa33 2.5 VGS(th) (V) 2 max 10-1 ID (A) 10-2 03aa36 typ 1.5 10-3 min typ max 1 min 10-4 0.5 10-5 0 -60 0 60 120 Tj ( C) o 10-6 180 0 0.5 1 1.5 2 2.5 3 VGS (V) ID = 1 mA; VDS = VGS Tj = 25 C; VDS = 5 V Fig 9. Gate-source threshold voltage as a function of junction temperature. Fig 10. Sub-threshold drain current as a function of gate-source voltage. 104 Ciss Coss Crss (pF) 103 03ad83 Ciss Coss Crss 102 10-1 1 10 VDS (V) 102 VGS = 0 V; f = 1 MHz Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. 9397 750 08216 (c) Philips Electronics N.V. 2001. All rights reserved. Product data Rev. 01 -- 18 July 2001 7 of 13 Philips Semiconductors PHD95N03LT N-channel enhancement mode field-effect transistor 03ad82 03ad84 75 IS (A) 60 VGS = 0 V 10 VGS (V) 8 Tj = 25 C ID = 50 A VDD = 6 V 12 V 24 V 45 6 30 Tj = 25 C 4 175 C 15 2 0 0 0.3 0.6 0.9 1.2 VSD (V) 0 0 30 60 QG (nC) 90 Tj = 25 C and 175 C; VGS = 0 V ID = 50 A; VDD = 24 V, 12 V and 6 V Fig 12. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. Fig 13. Gate-source voltage as a function of gate charge; typical values. 9397 750 08216 (c) Philips Electronics N.V. 2001. All rights reserved. Product data Rev. 01 -- 18 July 2001 8 of 13 Philips Semiconductors PHD95N03LT N-channel enhancement mode field-effect transistor 9. Package outline Plastic single-ended surface mounted package (Philips version of D-PAK); 3 leads (one lead cropped) SOT428 seating plane y A E b2 A A1 mounting base A2 D1 E1 D HE L2 2 L L1 1 b1 e e1 b 3 wM A c 0 10 scale 20 mm DIMENSIONS (mm are the original dimensions) A UNIT max. mm 2.38 2.22 A1(1) 0.65 0.45 A2 0.89 0.71 b 0.89 0.71 b1 max. 1.1 0.9 b2 5.36 5.26 c 0.4 0.2 D1 E D max. max. max. 6.22 5.98 4.81 4.45 6.73 6.47 E1 min. 4.0 e e1 HE max. 10.4 9.6 L 2.95 2.55 L1 min. 0.5 L2 0.7 0.5 w 0.2 y max. 0.2 2.285 4.57 Note 1. Measured from heatsink back to lead. OUTLINE VERSION SOT428 REFERENCES IEC JEDEC TO-252 EIAJ SC-63 EUROPEAN PROJECTION ISSUE DATE 98-04-07 99-09-13 Fig 14. SOT428 (D-PAK). 9397 750 08216 (c) Philips Electronics N.V. 2001. All rights reserved. Product data Rev. 01 -- 18 July 2001 9 of 13 Philips Semiconductors PHD95N03LT N-channel enhancement mode field-effect transistor 10. Revision history Table 6: 01 Revision history CPCN Description Product data; initial version Rev Date 20010718 9397 750 08216 (c) Philips Electronics N.V. 2001. All rights reserved. Product data Rev. 01 -- 18 July 2001 10 of 13 Philips Semiconductors PHD95N03LT N-channel enhancement mode field-effect transistor 11. Data sheet status Data sheet status [1] Objective data Preliminary data Product status [2] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Product data Production [1] [2] Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 12. Definitions Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 13. Disclaimers Life support -- These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 9397 750 08216 (c) Philips Electronics N.V. 2001 All rights reserved. Product data Rev. 01 -- 18 July 2001 11 of 13 Philips Semiconductors PHD95N03LT N-channel enhancement mode field-effect transistor Philips Semiconductors - a worldwide company Argentina: see South America Australia: Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Tel. +43 160 101, Fax. +43 160 101 1210 Belarus: Tel. +375 17 220 0733, Fax. +375 17 220 0773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Tel. +359 268 9211, Fax. +359 268 9102 Canada: Tel. +1 800 234 7381 China/Hong Kong: Tel. +852 2 319 7888, Fax. +852 2 319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Tel. +45 3 288 2636, Fax. +45 3 157 0044 Finland: Tel. +358 961 5800, Fax. +358 96 158 0920 France: Tel. +33 1 4728 6600, Fax. +33 1 4728 6638 Germany: Tel. +49 40 23 5360, Fax. +49 402 353 6300 Hungary: Tel. +36 1 382 1700, Fax. +36 1 382 1800 India: Tel. +91 22 493 8541, Fax. +91 22 493 8722 Indonesia: see Singapore Ireland: Tel. +353 17 64 0000, Fax. +353 17 64 0200 Israel: Tel. +972 36 45 0444, Fax. +972 36 49 1007 Italy: Tel. +39 039 203 6838, Fax +39 039 203 6800 Japan: Tel. +81 33 740 5130, Fax. +81 3 3740 5057 Korea: Tel. +82 27 09 1412, Fax. +82 27 09 1415 Malaysia: Tel. +60 37 50 5214, Fax. +60 37 57 4880 Mexico: Tel. +9-5 800 234 7381 Middle East: see Italy Netherlands: Tel. +31 40 278 2785, Fax. +31 40 278 8399 New Zealand: Tel. +64 98 49 4160, Fax. +64 98 49 7811 Norway: Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Tel. +63 28 16 6380, Fax. +63 28 17 3474 Poland: Tel. +48 22 5710 000, Fax. +48 22 5710 001 Portugal: see Spain Romania: see Italy Russia: Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: Tel. +27 11 471 5401, Fax. +27 11 471 5398 South America: Tel. +55 11 821 2333, Fax. +55 11 829 1849 Spain: Tel. +34 33 01 6312, Fax. +34 33 01 4107 Sweden: Tel. +46 86 32 2000, Fax. +46 86 32 2745 Switzerland: Tel. +41 14 88 2686, Fax. +41 14 81 7730 Taiwan: Tel. +886 22 134 2451, Fax. +886 22 134 2874 Thailand: Tel. +66 23 61 7910, Fax. +66 23 98 3447 Turkey: Tel. +90 216 522 1500, Fax. +90 216 522 1813 Ukraine: Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Tel. +44 208 730 5000, Fax. +44 208 754 8421 United States: Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: Tel. +381 11 3341 299, Fax. +381 11 3342 553 For all other countries apply to: Philips Semiconductors, Marketing Communications, Building BE, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 272 4825 Internet: http://www.semiconductors.philips.com (SCA72) 9397 750 08216 (c) Philips Electronics N.V. 2001. All rights reserved. Product data Rev. 01 -- 18 July 2001 12 of 13 Philips Semiconductors PHD95N03LT N-channel enhancement mode field-effect transistor Contents 1 2 3 4 5 6 7 7.1 8 9 10 11 12 13 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Transient thermal impedance . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 (c) Philips Electronics N.V. 2001. Printed in The Netherlands All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 18 July 2001 Document order number: 9397 750 08216 |
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